Справочник MOSFET. FDS8947A

 

FDS8947A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS8947A
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

FDS8947A Datasheet (PDF)

 8.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8947A

February 2010FDS8949_F085tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 8.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8947A

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 8.3. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8947A

FDS8949-F085Dual N-Channel Logic Level PowerTrench MOSFET40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing ON Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5VPowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 8.4. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8947A

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

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