2SK1837 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1837 Silicon N Channel MOS FET REJ03G0979-0200 (Previous ADE-208-1326) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D G

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor 2SK1837 FEATURES With TO-3PL package Low input capacitance and gate charge High speed switching Low gate input resistance No secondary breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power

2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics S

Ordering number EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK1839- unit mm applied sets to be made small and slim. 2057A Large yfs . [2SK1839] Enhancement type. Low ON resistance. 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 (Previous ADE-208-1325) Rev.3.00 Apr 27, 2006 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 (Previous ADE-208-1324) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

Power F-MOS FETs 2SK1833 2SK1833 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 90mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf= 30ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control

Power F-MOS FETs 2SK1834 2SK1834 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 15mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf = 25ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Contro

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage K1831 VDSS 450 V K1832 500 G

isc N-Channel MOSFET Transistor 2SK1833 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc N-Channel MOSFET Transistor 2SK1834 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO