2SK1837 Silicon N Channel MOS FET REJ03G0979-0200 (Previous: ADE-208-1326) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: TO-3PL)DG

2SK1836, 2SK1837Silicon N Channel MOS FETApplicationTO3PLHigh speed power switchingFeatures Low onresistance High speed switching Low drive current2 No secondary breakdown Suitable for switchingregulator, DCDC11converter231. Gate2. Drain (Flange)Table 1 Ordering Information3. Source3Type No VDSS

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2SK1837FEATURESWith TO-3PL packageLow input capacitance and gate chargeHigh speed switchingLow gate input resistanceNo secondary breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower

2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics S

Ordering number:EN4634N-Channel Enhancement Silicon MOSFET2SK1839Analog Switch ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK1839-unit:mmapplied sets to be made small and slim.2057A Large yfs.[2SK1839] Enhancement type. Low ON resistance.0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Gate2 : Drain3

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C(Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 (Previous: ADE-208-1325) Rev.3.00 Apr 27, 2006 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 (Previous: ADE-208-1324) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

Power F-MOS FETs 2SK18332SK1833Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed : EAS > 90mJ5.5 0.2 2.7 0.2VGSS=30V guaranteedHigh-speed switching : tf= 30ns3.1 0.1No secondary breakdown Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveControl

Power F-MOS FETs 2SK18342SK1834Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed : EAS > 15mJ5.5 0.2 2.7 0.2VGSS=30V guaranteedHigh-speed switching : tf = 25ns3.1 0.1No secondary breakdown Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveContro

2SK1831, 2SK1832Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converterOutline2SK1831, 2SK1832Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage K1831 VDSS 450 VK1832 500G

isc N-Channel MOSFET Transistor 2SK1833DESCRIPTIONDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDiving circuit for a solenoid and motorControl equipmentSwitching power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc N-Channel MOSFET Transistor 2SK1834DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDiving circuit for a solenoid and motorControl equipmentSwitching power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO