2SK1925 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1925
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO3PB

Búsqueda de reemplazo de MOSFET 2SK1925

2SK1925 Datasheet (PDF)

..1. Size:115K sanyo
2sk1925.pdf

Ordering number:ENN4314N-Channel Silicon MOSFET2SK1925Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2056A High-speed diode (trr=150ns).[2SK1925]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO-3PBSpecificationsAbsolute Maximum

..2. Size:217K inchange semiconductor
2sk1925.pdf

isc N-Channel MOSFET Transistor 2SK1925DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600

8.1. Size:362K toshiba
2sk192a.pdf

2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit: mm VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta == 25C) ==Characteristics Sy

8.2. Size:539K toshiba
2sk1929.pdf

8.3. Size:114K sanyo
2sk1924.pdf

Ordering number:EN4313N-Channel Silicon MOSFET2SK1924Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=140ns).[2SK1924]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings

8.4. Size:93K sanyo
2sk1920.pdf

Ordering number:EN4244AN-Channel Silicon MOSFET2SK1920Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1920]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1920]6.5 2.35.0 0.540.5

8.5. Size:109K sanyo
2sk1922.pdf

Ordering number:EN4311N-Channel Silicon MOSFET2SK1922Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=100ns).[2SK1922]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings

8.6. Size:89K sanyo
2sk1921.pdf

Ordering number:EN4310N-Channel Silicon MOSFET2SK1921Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C Low-voltage drive.[2SK1921]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25

8.7. Size:113K sanyo
2sk1923.pdf

Ordering number:EN4312N-Channel Silicon MOSFET2SK1923Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=120ns).[2SK1923]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings

8.8. Size:98K no
2sk1915 2sk1927 2sk1928.pdf

8.9. Size:214K inchange semiconductor
2sk1924.pdf

isc N-Channel MOSFET Transistor 2SK1924DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600 V

8.10. Size:216K inchange semiconductor
2sk1922.pdf

isc N-Channel MOSFET Transistor 2SK1922DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.11. Size:214K inchange semiconductor
2sk1923.pdf

isc N-Channel MOSFET Transistor 2SK1923DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0

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