2SK1925 - описание и поиск аналогов

Ordering number ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2056A High-speed diode (trr=150ns). [2SK1925] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum

isc N-Channel MOSFET Transistor 2SK1925 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600

2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit mm VHF Band Amplifier Applications High power gain GPS = 24dB (typ.) (f = 100 MHz) Low noise figure NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance Yfs = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Sy

Ordering number EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=140ns). [2SK1924] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings

Ordering number EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1920] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1920] 6.5 2.3 5.0 0.5 4 0.5

Ordering number EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=100ns). [2SK1922] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings

Ordering number EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=120ns). [2SK1923] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings

isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600 V

isc N-Channel MOSFET Transistor 2SK1922 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1923 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0