2SK2039 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2039DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.28 s (typ.) ont = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent CircuitJ

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2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent CircuitM

2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage.: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJE

2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.28 s (typ.) ont = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJEDE

2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJED

Power F-MOS FETs 2SK20322SK2032Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 200mJ15.0 0.3 5.0 0.2VGSS=30V guaranteed11.0 0.2 3.2High-speed switching : tf= 90ns3.2 0.1No secondary breakdown Applications2.0 0.22.0 0.1Non-contact relay1.1 0.1 0.6 0.2Solenoid drive5.45 0.3Motor drive10.9

SMD Type MOSFETN-Channel MOSFET2SK2033SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 100mA1 2 RDS(ON) 12 (VGS = 2.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFETN-Channel MOSFET2SK2033SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 100mA1 2+0.1 RDS(ON) 12 (VGS = 2.5V) +0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

isc N-Channel MOSFET Transistor 2SK2038DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P