2SK2039 Todos los transistores

 ..1. Size:312K  toshiba
 2sk2039.pdf

 ..2. Size:219K  inchange semiconductor
 2sk2039.pdf

isc N-Channel MOSFET Transistor 2SK2039 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.1. Size:325K  toshiba
 2sk2036.pdf

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J

 8.2. Size:198K  toshiba
 2sk2038.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:294K  toshiba
 2sk2035.pdf

2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M

 8.4. Size:74K  toshiba
 2sk2030.pdf

 8.5. Size:398K  toshiba
 2sk2034.pdf

2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage. V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JE

 8.6. Size:298K  toshiba
 2sk2037.pdf

2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JEDE

 8.7. Size:295K  toshiba
 2sk2033.pdf

2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JED

 8.8. Size:31K  panasonic
 2sk2032.pdf

Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 90ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9

 8.9. Size:1082K  kexin
 2sk2033-3.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 RDS(ON) 12 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou

 8.10. Size:830K  kexin
 2sk2033.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 +0.1 RDS(ON) 12 (VGS = 2.5V) +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

 8.11. Size:219K  inchange semiconductor
 2sk2038.pdf

isc N-Channel MOSFET Transistor 2SK2038 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P