2SK2039 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK2039 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J

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2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M

2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage. V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JE

2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JEDE

2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JED

Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 90ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 RDS(ON) 12 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 +0.1 RDS(ON) 12 (VGS = 2.5V) +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

isc N-Channel MOSFET Transistor 2SK2038 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P