AP01L60T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP01L60T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de AP01L60T MOSFET
AP01L60T Datasheet (PDF)
ap01l60t.pdf

AP01L60TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effect
ap01l60t-h-hf.pdf

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan
ap01l60t-h.pdf

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan
ap01l60t-hf.pdf

AP01L60T-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,
Otros transistores... 2SK2596 , 2SK2633LS , 2SK2700 , AP0103GMT-HF , AP0103GP-HF , AP01L60AT , AP01L60H-HF , AP01L60J-HF , IRF630 , AP01L60T-H-HF , AP01N15GK-HF , AP01N40G-HF , AP01N40J-HF , AP01N40H-HF , AP01N60H-HF , AP01N60J-HF , 2SK2740 .
History: HM16P12D | 2SJ475-01 | 2SK212 | FHA20N50A | HU60N75 | VBM2309 | AMPCW120R30CV
History: HM16P12D | 2SJ475-01 | 2SK212 | FHA20N50A | HU60N75 | VBM2309 | AMPCW120R30CV



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