AP01L60T. Аналоги и основные параметры
Наименование производителя: AP01L60T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 20 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
Тип корпуса: TO92
Аналог (замена) для AP01L60T
- подборⓘ MOSFET транзистора по параметрам
AP01L60T даташит
ap01l60t.pdf
AP01L60T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effect
ap01l60t-h-hf.pdf
AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan
ap01l60t-h.pdf
AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan
ap01l60t-hf.pdf
AP01L60T-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance,
Другие MOSFET... 2SK2596 , 2SK2633LS , 2SK2700 , AP0103GMT-HF , AP0103GP-HF , AP01L60AT , AP01L60H-HF , AP01L60J-HF , IRF640N , AP01L60T-H-HF , AP01N15GK-HF , AP01N40G-HF , AP01N40J-HF , AP01N40H-HF , AP01N60H-HF , AP01N60J-HF , 2SK2740 .
History: SWB062R08E8T | RUF020N02 | SWD4N50K | AOWF10N60 | 4N60L-TN3-R | SWD80N04V | HM4354
History: SWB062R08E8T | RUF020N02 | SWD4N50K | AOWF10N60 | 4N60L-TN3-R | SWD80N04V | HM4354
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Список транзисторов
Обновления
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