2SK2881 Todos los transistores

 

2SK2881 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2881

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 50 V

|Id|ⓘ - Corriente continua de drenaje: 0.02 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 70 Ohm

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2SK2881 datasheet

 ..1. Size:103K  isahaya
2sk2881.pdf pdf_icon

2SK2881

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw

 8.1. Size:417K  toshiba
2sk2889.pdf pdf_icon

2SK2881

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V

 8.2. Size:430K  toshiba
2sk2883.pdf pdf_icon

2SK2881

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4

 8.3. Size:423K  toshiba
2sk2886.pdf pdf_icon

2SK2881

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 14 m (typ.) (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 0.8 2.0 V (V

Otros transistores... 2SK2740 , 2SK2791 , 2SK2792 , 2SK2793 , 2SK2795 , 2SK2845 , 2SK2854 , 2SK2855 , 2SK3878 , 2SK2887 , 2SK2916 , 2SJ0398 , 2SJ0582 , 2SK2973 , 2SK2974 , 2SK2975 , 2SK2976 .

History: AP3N4R0H | NCE60R360 | 15N05 | AP3P6R0S | MC3406 | SK2307A

 

 

 


History: AP3N4R0H | NCE60R360 | 15N05 | AP3P6R0S | MC3406 | SK2307A

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