2SK2881 - описание и поиск аналогов

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 14 m (typ.) (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 0.8 2.0 V (V

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Y = 3.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I =

Transistors Switching (200V, 3A) 2SK2887 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 16

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

isc N-Channel MOSFET Transistor 2SK2885L FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2889B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2887 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2886 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL VALU

isc N-Channel MOSFET Transistor 2SK2884B FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2885S FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2889K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2884K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2883K FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2883B FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK2882 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid