2SK3101 Todos los transistores

 ..1. Size:56K  sanyo
 2sk3101.pdf

Ordering number ENN7910 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3101LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

 0.1. Size:44K  1
 2sk3101ls.pdf

Ordering number ENN7910 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3101LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

 0.2. Size:279K  inchange semiconductor
 2sk3101ls.pdf

isc N-Channel MOSFET Transistor 2SK3101LS FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:94K  renesas
 2sk3107c.pdf

Preliminary Data Sheet 2SK3107C R07DS1286EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015 Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

 8.2. Size:50K  nec
 2sk3107.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3107 is a switching device which can be driven directly by a 0.3 0.05 0.1+0.1 0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digit

 8.3. Size:68K  nec
 2sk3108.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE and designed for high voltage applications such as DC/DC 2SK3108 Isolated TO-220 converter. FEATURES Gate vol

 8.4. Size:77K  nec
 2sk3109.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB switching characteristics, and designed for high voltage 2SK3109-S TO-262 applications such as DC/DC converter. 2SK3109-ZJ

 8.5. Size:62K  nec
 2sk3105.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3105 is a switching device which can be driven +0.1 0.4 0.05 directly by a 4 V power source. 0.16+0.1 0.06 The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications su

 8.6. Size:294K  fuji
 2sk3102-01r.pdf

2SK3102-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features TO-3PF High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C unless other

 8.7. Size:53K  hitachi
 2sk310 2sk311.pdf

 8.8. Size:282K  inchange semiconductor
 2sk3109-s.pdf

isc N-Channel MOSFET Transistor 2SK3109-S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.9. Size:288K  inchange semiconductor
 2sk3109.pdf

isc N-Channel MOSFET Transistor 2SK3109 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 8.10. Size:273K  inchange semiconductor
 2sk3102-01r.pdf

isc N-Channel MOSFET Transistor 2SK3102-01R FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.11. Size:356K  inchange semiconductor
 2sk3109-az.pdf

isc N-Channel MOSFET Transistor 2SK3109-AZ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.12. Size:356K  inchange semiconductor
 2sk3109-zj.pdf

isc N-Channel MOSFET Transistor 2SK3109-ZJ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno