Ordering number : ENN7910 2SK3101LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3101LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source

Ordering number : ENN7910 2SK3101LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3101LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source

isc N-Channel MOSFET Transistor 2SK3101LSFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Preliminary Data Sheet 2SK3107C R07DS1286EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3107N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK3107 is a switching device which can be driven directly by a0.3 0.05 0.1+0.10.052.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable foruse as a high-speed switching device in digit

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3108SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features alow on-state resistance and excellent switching characteristics, PART NUMBER PACKAGEand designed for high voltage applications such as DC/DC2SK3108 Isolated TO-220converter.FEATURESGate vol

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3109SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3109 TO-220ABswitching characteristics, and designed for high voltage2SK3109-S TO-262applications such as DC/DC converter.2SK3109-ZJ

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3105N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK3105 is a switching device which can be driven+0.10.4 0.05directly by a 4 V power source.0.16+0.10.06 The 2SK3105 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications su

2SK3102-01RFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIS SERIESOutline DrawingsFeaturesTO-3PFHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless other

isc N-Channel MOSFET Transistor 2SK3109-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3109FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3102-01RFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3109-AZFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3109-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno