AP02N60J-H Todos los transistores

 

AP02N60J-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N60J-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8.8 Ohm

Encapsulados: TO251

 Búsqueda de reemplazo de AP02N60J-H MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP02N60J-H datasheet

 ..1. Size:246K  ape
ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60J-H

AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications

 0.1. Size:65K  ape
ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and

 0.2. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC

 6.1. Size:102K  ape
ap02n60h ap02n60j.pdf pdf_icon

AP02N60J-H

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th

Otros transistores... AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , IRFZ24N , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , AP02N90P-HF .

History: BRI65R380C

 

 

 

 

↑ Back to Top
.