All MOSFET. AP02N60J-H Datasheet

 

AP02N60J-H Datasheet and Replacement


   Type Designator: AP02N60J-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
   Package: TO251
 

 AP02N60J-H substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP02N60J-H Datasheet (PDF)

 ..1. Size:246K  ape
ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60J-H

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

 0.1. Size:65K  ape
ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 0.2. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

 6.1. Size:102K  ape
ap02n60h ap02n60j.pdf pdf_icon

AP02N60J-H

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

Datasheet: AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , AON6380 , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , AP02N90P-HF .

History: WMN30N80M3 | H04N60F | NCE60NF055F | SFF240J | 2SK1417 | AP9972AGP

Keywords - AP02N60J-H MOSFET datasheet

 AP02N60J-H cross reference
 AP02N60J-H equivalent finder
 AP02N60J-H lookup
 AP02N60J-H substitution
 AP02N60J-H replacement

 

 
Back to Top

 


 
.