AP02N60J-H PDF and Equivalents Search

 

AP02N60J-H Specs and Replacement

Type Designator: AP02N60J-H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm

Package: TO251

AP02N60J-H substitution

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AP02N60J-H datasheet

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ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60J-H

AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications ... See More ⇒

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ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and ... See More ⇒

 0.2. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60J-H

AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC... See More ⇒

 6.1. Size:102K  ape
ap02n60h ap02n60j.pdf pdf_icon

AP02N60J-H

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th... See More ⇒

Detailed specifications: AP02N40J-HF, AP02N40K-HF, AP02N40P, AP02N60H, AP02N60H-H, AP02N60I, AP02N60I-A-HF, AP02N60J, IRFZ24N, AP02N60P-A-HF, AP02N60T-H-HF, AP02N70EI-HF, AP02N70EJ, AP02N90H-HF, AP02N90I, AP02N90J-HF, AP02N90P-HF

Keywords - AP02N60J-H MOSFET specs

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