AP02N60P-A-HF Todos los transistores

 

AP02N60P-A-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N60P-A-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO220

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AP02N60P-A-HF datasheet

 ..1. Size:56K  ape
 ap02n60p-a-hf.pdf pdf_icon

AP02N60P-A-HF

AP02N60P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-Free G D TO-220 S Description D The TO-220 package is widely preferred for all commercial-industrial applications. The device is

 5.1. Size:55K  ape
 ap02n60p-hf.pdf pdf_icon

AP02N60P-A-HF

AP02N60P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A G Halogen Free & RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- G industrial applications. The device is sui

 6.1. Size:69K  ape
 ap02n60p.pdf pdf_icon

AP02N60P-A-HF

AP02N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant G D TO-220 S Description D The TO-220 package is universally preferred for all commerci

 7.1. Size:102K  ape
 ap02n60h ap02n60j.pdf pdf_icon

AP02N60P-A-HF

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th

MOSTRAR MÁS

Otros transistores... AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , AP02N60J-H , 2N60 , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , AP02N90P-HF , AP03N40AH-HF .

History: AOWF14N50 | SW4N70B

 

 

 

 

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