Справочник MOSFET. AP02N60P-A-HF

 

AP02N60P-A-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP02N60P-A-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP02N60P-A-HF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP02N60P-A-HF Datasheet (PDF)

 ..1. Size:56K  ape
ap02n60p-a-hf.pdfpdf_icon

AP02N60P-A-HF

AP02N60P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-FreeGD TO-220SDescriptionDThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is

 5.1. Size:55K  ape
ap02n60p-hf.pdfpdf_icon

AP02N60P-A-HF

AP02N60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2AG Halogen Free & RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-Gindustrial applications. The device is sui

 6.1. Size:69K  ape
ap02n60p.pdfpdf_icon

AP02N60P-A-HF

AP02N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETRepetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS CompliantGDTO-220SDescriptionDThe TO-220 package is universally preferred for all commerci

 7.1. Size:102K  ape
ap02n60h ap02n60j.pdfpdf_icon

AP02N60P-A-HF

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

Другие MOSFET... AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , AP02N60J-H , IRF830 , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , AP02N90P-HF , AP03N40AH-HF .

History: UT60N03G-TA3-T | FDP8N50NZU | RS1G120MN | NTMFS4939NT1G | TPB70R950C | CS10N60A8HD | AP9435GP-HF

 

 
Back to Top

 


 
.