AP02N90I Todos los transistores

 

AP02N90I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N90I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm

Encapsulados: TO220F

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AP02N90I datasheet

 ..1. Size:39K  ape
 ap02n90i.pdf pdf_icon

AP02N90I

AP02N90I Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS compliant S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for s

 0.1. Size:92K  ape
 ap02n90i-hf.pdf pdf_icon

AP02N90I

AP02N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device

 7.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N90I

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

 7.2. Size:57K  ape
 ap02n90p-hf.pdf pdf_icon

AP02N90I

AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G D TO-220 D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

MOSTRAR MÁS

Otros transistores... AP02N60I-A-HF , AP02N60J , AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , IRFB31N20D , AP02N90J-HF , AP02N90P-HF , AP03N40AH-HF , AP03N40AI-HF , AP03N40AJ-HF , AP03N40AP-HF , AP03N40I-HF , AP03N40J-HF .

History: SPP80N06S2L-H5 | SWD110R03VT | AP0103GP-HF | JBE112Q | SWD088R06VT | AP03N40AJ-HF | BSC080N03MS

 

 

 

 

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