AP02N90P-HF Todos los transistores

 

AP02N90P-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP02N90P-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
   Paquete / Cubierta: TO220
 

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AP02N90P-HF Datasheet (PDF)

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 ap02n90p-hf.pdf pdf_icon

AP02N90P-HF

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching

 6.1. Size:157K  ape
 ap02n90p.pdf pdf_icon

AP02N90P-HF

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve

 7.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N90P-HF

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the

 7.2. Size:39K  ape
 ap02n90i.pdf pdf_icon

AP02N90P-HF

AP02N90IPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS compliantSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for s

MOSTRAR MÁS

Otros transistores... AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , NCEP15T14 , AP03N40AH-HF , AP03N40AI-HF , AP03N40AJ-HF , AP03N40AP-HF , AP03N40I-HF , AP03N40J-HF , AP03N70H-A-HF , AP03N70H-H .

History: 2SK2021-01 | FQD6N40TM | NVD3055-150 | BLP038N10GL-B | IRFI540NPBF

 

 
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