AP0403GM-HF Todos los transistores

 

AP0403GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0403GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: SO8

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AP0403GM-HF datasheet

 ..1. Size:90K  ape
ap0403gm-hf.pdf pdf_icon

AP0403GM-HF

AP0403GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 4.5m D Fast Switching Characteristic ID 18.7A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:167K  ape
ap0403gm.pdf pdf_icon

AP0403GM-HF

AP0403GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 4.5m D Fast Switching Characteristic ID 18.7A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0403 series are from

 7.1. Size:143K  ape
ap0403gh.pdf pdf_icon

AP0403GM-HF

AP0403GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi

 7.2. Size:93K  ape
ap0403gh-hf.pdf pdf_icon

AP0403GM-HF

AP0403GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, rugge

Otros transistores... AP03N70J-A-HF , AP03N70J-H , AP03N70J-HF , AP03N70P-A , AP03N70P-H , AP03N90I-HF , AP03N90P-HF , AP0403GH-HF , IRF740 , 2SK2647-01MR , 2SK3264-01MR , 2SK3530-01MR , 2SJ413 , 2SJ416 , 2SJ417 , 2SJ419 , 2SJ418 .

History: IXFQ50N50P3 | MSF10N65 | TK5A60W | STS3417 | AOD407 | DMP2225L

 

 

 


History: IXFQ50N50P3 | MSF10N65 | TK5A60W | STS3417 | AOD407 | DMP2225L

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