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2SJ419 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ419

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 170 nS

Conductancia de drenaje-sustrato (Cd): 800 pF

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: SOP8

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2SJ419 Datasheet (PDF)

1.1. 2sj419.pdf Size:100K _sanyo

2SJ419
2SJ419

Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2116 2.5V drive. [2SJ419] 8 5 1 : Source 2 : Source 3 : Source 14 0.2 4 : Gate 5.0 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Rat

5.1. 2sj410.pdf Size:1111K _update_mosfet

2SJ419
2SJ419

2SJ410 Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter and motor driver Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G

5.2. 2sj412.pdf Size:189K _toshiba

2SJ419
2SJ419

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 ? (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = -100 ?A (max) (VDS = -100 V) • Enhancement mode: Vth

 5.3. 2sj418.pdf Size:127K _sanyo

2SJ419
2SJ419

Ordering number:ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ418] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ418] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.4. 2sj416.pdf Size:411K _sanyo

2SJ419
2SJ419

Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ416] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter S

 5.5. 2sj413.pdf Size:79K _sanyo

2SJ419
2SJ419

Ordering number:ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2076B Low-voltage drive. [2SJ413] Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PML Specificatio

5.6. 2sj417.pdf Size:131K _sanyo

2SJ419
2SJ419

Ordering number:EN5267 P-Channel Silicon MOSFET 2SJ417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ417] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ417] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.7. 2sj411.pdf Size:69K _nec

2SJ419
2SJ419

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches a

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