All MOSFET. 2SJ419 Datasheet

 

2SJ419 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ419

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: SOP8

2SJ419 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ419 Datasheet (PDF)

1.1. 2sj419.pdf Size:100K _sanyo

2SJ419
2SJ419

Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2116 2.5V drive. [2SJ419] 8 5 1 : Source 2 : Source 3 : Source 14 0.2 4 : Gate 5.0 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Rat

5.1. 2sj412.pdf Size:189K _toshiba

2SJ419
2SJ419

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 ? (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = -100 ?A (max) (VDS = -100 V) • Enhancement mode: Vth

5.2. 2sj418.pdf Size:127K _sanyo

2SJ419
2SJ419

Ordering number:ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ418] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ418] 6.5 2.3 5.0 0.5 4 0.5 0.85

 5.3. 2sj416.pdf Size:411K _sanyo

2SJ419
2SJ419

Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ416] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter S

5.4. 2sj413.pdf Size:79K _sanyo

2SJ419
2SJ419

Ordering number:ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2076B Low-voltage drive. [2SJ413] Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 : Gate 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PML Specificatio

 5.5. 2sj417.pdf Size:131K _sanyo

2SJ419
2SJ419

Ordering number:EN5267 P-Channel Silicon MOSFET 2SJ417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ417] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ417] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.6. 2sj411.pdf Size:69K _nec

2SJ419
2SJ419

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches a

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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