AP04N70BI-H-HF Todos los transistores

 

AP04N70BI-H-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP04N70BI-H-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.3 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO220F

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AP04N70BI-H-HF datasheet

 ..1. Size:108K  ape
 ap04n70bi-h-hf.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

 3.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 3.2. Size:224K  ape
 ap04n70bi-h.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l

 4.1. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

MOSTRAR MÁS

Otros transistores... AP04N60H-HF , AP04N60H-H-HF , AP04N60I , AP04N60I-A-HF , AP04N60R-A-HF , AP04N60S-H-HF , AP04N70BI , AP04N70BI-A , IRF9540 , AP04N70BP-A , AP04N70BS-H-HF , AP04N80I-HF , AP04N80R-HF , 2SK4097LS , 2SK2103 , 2SK315 , 2SK321 .

History: BUK444-200A | FTS2057 | APT47N65BC3 | IRFB3006 | ME2302 | 2SK1879 | 3LN01SS

 

 

 

 

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