All MOSFET. AP04N70BI-H-HF Datasheet

 

AP04N70BI-H-HF Datasheet and Replacement


   Type Designator: AP04N70BI-H-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220F
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AP04N70BI-H-HF Datasheet (PDF)

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 ap04n70bi-h-hf.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GD

 3.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 3.2. Size:224K  ape
 ap04n70bi-h.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N70B series are from Advanced Power innovated design andsilicon process technology to achieve the l

 4.1. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BI-H-HF

AP04N70BI-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan

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Keywords - AP04N70BI-H-HF MOSFET datasheet

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