AP04N70BS-H-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP04N70BS-H-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 62.5 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 75 pF
Resistencia entre drenaje y fuente RDS(on): 2.4 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET AP04N70BS-H-HF
AP04N70BS-H-HF Datasheet (PDF)
ap04n70bs-h-hf.pdf
AP04N70BS-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N70 series are specially designed as main switching devices for GDS TO-263(S)universal 90~265VAC
ap04n70bs-h.pdf
AP04N70BS-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N70B series are from Advanced Power innovated design and GDS TO-263(S)silicon process technology
ap04n70bi-hf.pdf
AP04N70BI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi
ap04n70bi-a.pdf
AP04N70BI-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan
ap04n70bi-a-hf.pdf
AP04N70BI-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
ap04n70bi-h.pdf
AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N70B series are from Advanced Power innovated design andsilicon process technology to achieve the l
ap04n70bi.pdf
AP04N70BIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
ap04n70bp-a.pdf
AP04N70BP-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAP04N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. TO-220 type
ap04n70bi-h-hf.pdf
AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GD
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