AP0504GH-HF Todos los transistores

 

AP0504GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP0504GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 66 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
   Paquete / Cubierta: TO252

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AP0504GH-HF Datasheet (PDF)

 ..1. Size:93K  ape
ap0504gh-hf.pdf

AP0504GH-HF
AP0504GH-HF

AP0504GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 6.3m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 7.1. Size:142K  ape
ap0504gmt.pdf

AP0504GH-HF
AP0504GH-HF

AP0504GMT-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDescriptionDAP0504 series are from Advanced Power inno

 7.2. Size:94K  ape
ap0504gmt-hf.pdf

AP0504GH-HF
AP0504GH-HF

AP0504GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 7.3. Size:959K  cn vbsemi
ap0504gmt.pdf

AP0504GH-HF
AP0504GH-HF

AP0504GMTwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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