All MOSFET. AP0504GH-HF Datasheet

 

AP0504GH-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP0504GH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO252

 AP0504GH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP0504GH-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap0504gh-hf.pdf

AP0504GH-HF AP0504GH-HF

AP0504GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 6.3m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 7.1. Size:142K  ape
 ap0504gmt.pdf

AP0504GH-HF AP0504GH-HF

AP0504GMT-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDescriptionDAP0504 series are from Advanced Power inno

 7.2. Size:94K  ape
 ap0504gmt-hf.pdf

AP0504GH-HF AP0504GH-HF

AP0504GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 7.3. Size:959K  cn vbsemi
 ap0504gmt.pdf

AP0504GH-HF AP0504GH-HF

AP0504GMTwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA

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