AP05N20GH-HF Todos los transistores

 

AP05N20GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP05N20GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.5 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO252

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AP05N20GH-HF datasheet

 5.1. Size:61K  ape
 ap05n20gh j-hf.pdf pdf_icon

AP05N20GH-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 5.2. Size:196K  ape
 ap05n20gh.pdf pdf_icon

AP05N20GH-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 6.1. Size:164K  ape
 ap05n20gj.pdf pdf_icon

AP05N20GH-HF

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 6.2. Size:171K  ape
 ap05n20gi.pdf pdf_icon

AP05N20GH-HF

AP05N20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP05N20 series are from Advanced Power innovated design and silicon process technology to achieve the low

MOSTRAR MÁS

Otros transistores... 2SK3230B , 2SK324 , 2SK3280 , 2SK3283 , 2SK3284 , AP0503GMT-HF , AP0504GH-HF , AP0504GMT-HF , 5N65 , AP05N20GI-HF , AP05N20GJ-HF , AP05N50EH-HF , AP05N50EI-HF , AP05N50EJ-HF , AP05N50H-HF , AP05N50I , AP05N50IB-HF .

History: TMD2N40 | AGM405MNA | SM4033NHU | FHP630A | MSD23N58 | STD60N3LH5

 

 

 

 

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