AP05N20GH-HF - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP05N20GH-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8.5 ns
Cossⓘ - Выходная емкость: 70 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO252
Аналог (замена) для AP05N20GH-HF
AP05N20GH-HF Datasheet (PDF)
ap05n20gh j-hf.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gh.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gj.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gi.pdf

AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP05N20 series are from Advanced Power innovated design andsilicon process technology to achieve the low
Другие MOSFET... 2SK3230B , 2SK324 , 2SK3280 , 2SK3283 , 2SK3284 , AP0503GMT-HF , AP0504GH-HF , AP0504GMT-HF , IRF4905 , AP05N20GI-HF , AP05N20GJ-HF , AP05N50EH-HF , AP05N50EI-HF , AP05N50EJ-HF , AP05N50H-HF , AP05N50I , AP05N50IB-HF .
History: STB440S | HA20N60 | SI5N60-TM3-T | FCPF220N80 | 2SK3872-01S | ASDM30P11TD | STP130N6F7
History: STB440S | HA20N60 | SI5N60-TM3-T | FCPF220N80 | 2SK3872-01S | ASDM30P11TD | STP130N6F7



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