AP05N20GI-HF Todos los transistores

 

AP05N20GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP05N20GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 8.5 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F

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AP05N20GI-HF Datasheet (PDF)

 ..1. Size:58K  ape
ap05n20gi-hf.pdf

AP05N20GI-HF
AP05N20GI-HF

AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 560m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gru

 5.1. Size:171K  ape
ap05n20gi.pdf

AP05N20GI-HF
AP05N20GI-HF

AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP05N20 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 6.1. Size:61K  ape
ap05n20gh j-hf.pdf

AP05N20GI-HF
AP05N20GI-HF

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

 6.2. Size:164K  ape
ap05n20gj.pdf

AP05N20GI-HF
AP05N20GI-HF

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

 6.3. Size:196K  ape
ap05n20gh.pdf

AP05N20GI-HF
AP05N20GI-HF

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

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History: AP9990GMT

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