AP05N20GI-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP05N20GI-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 30 nC
trⓘ - Время нарастания: 8.5 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP05N20GI-HF
AP05N20GI-HF Datasheet (PDF)
ap05n20gi-hf.pdf
AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 560m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gru
ap05n20gi.pdf
AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP05N20 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap05n20gh j-hf.pdf
AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gj.pdf
AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gh.pdf
AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918