AP05N50EJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP05N50EJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET AP05N50EJ-HF

AP05N50EJ-HF Datasheet (PDF)

..1. Size:63K ape
ap05n50eh-hf ap05n50ej-hf.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the to

5.1. Size:161K ape
ap05n50ej.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

6.1. Size:59K ape
ap05n50ei-hf.pdf

AP05N50EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys

6.2. Size:196K ape
ap05n50eh.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: