All MOSFET. AP05N50EJ-HF Datasheet

 

AP05N50EJ-HF Datasheet and Replacement


   Type Designator: AP05N50EJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO251
 

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AP05N50EJ-HF Datasheet (PDF)

 ..1. Size:63K  ape
 ap05n50eh-hf ap05n50ej-hf.pdf pdf_icon

AP05N50EJ-HF

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the to

 5.1. Size:161K  ape
 ap05n50ej.pdf pdf_icon

AP05N50EJ-HF

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

 6.1. Size:59K  ape
 ap05n50ei-hf.pdf pdf_icon

AP05N50EJ-HF

AP05N50EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys

 6.2. Size:196K  ape
 ap05n50eh.pdf pdf_icon

AP05N50EJ-HF

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

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History: HTM105P03P | NP48N055KLE | BSC057N08NS3G | SL05N06Z | SWP055R68E7T

Keywords - AP05N50EJ-HF MOSFET datasheet

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