AP0903GYT-HF Todos los transistores

 

AP0903GYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP0903GYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: PMPAK3X3
 

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AP0903GYT-HF Datasheet (PDF)

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 ap0903gyt-hf.pdf pdf_icon

AP0903GYT-HF

AP0903GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 5.1. Size:111K  ape
 ap0903gyt.pdf pdf_icon

AP0903GYT-HF

AP0903GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, rugge

 7.1. Size:95K  ape
 ap0903gm-hf.pdf pdf_icon

AP0903GYT-HF

AP0903GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 8.5mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.2. Size:168K  ape
 ap0903gm.pdf pdf_icon

AP0903GYT-HF

AP0903GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 8.5mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP0903 series are from

MOSTRAR MÁS

Otros transistores... AP07N70CI-H , AP0803GMP-HF , AP0803GMT-HF , AP08N60I-HF , AP08P20GP-HF , AP08P20GS-HF , AP0903GH-HF , AP0903GM-HF , 2N60 , AP0904GH-HF , AP0904GJB-HF , AP0904GJ-HF , AP0904GMT-HF , AP0904GYT-HF , AP09N20BGH-HF , AP09N20BGI-HF , AP09N20BGP-HF .

History: AP09N20J-HF | SI2328 | AP09N90W | CS840F | CS8N65A8H | MEM614 | CS8N60FA9H

 

 
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