AP09N50I-HF Todos los transistores

 

AP09N50I-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09N50I-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET AP09N50I-HF

 

Principales características: AP09N50I-HF

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 ap09n50i-hf.pdf pdf_icon

AP09N50I-HF

AP09N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.1. Size:59K  ape
 ap09n50i.pdf pdf_icon

AP09N50I-HF

AP09N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistan

 7.1. Size:95K  ape
 ap09n50p-hf.pdf pdf_icon

AP09N50I-HF

AP09N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 500V Fast Switching Characteristic RDS(ON) 0.75 RoHS Compliant & Halogen-Free ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G

 9.1. Size:238K  ape
 ap09n20h.pdf pdf_icon

AP09N50I-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl

MOSTRAR MÁS

Otros transistores... AP0904GMT-HF , AP0904GYT-HF , AP09N20BGH-HF , AP09N20BGI-HF , AP09N20BGP-HF , AP09N20H-HF , AP09N20J-HF , AP09N50I , IRF1405 , AP09N50P-HF , AP09N70I-A , AP09N70I-A-HF , AP09N70I-H-HF , AP09N70R-H , AP09N70P-H , AP09N70P-A , AP09N70R .

History: TSM650P03CX | PDC2306Z

 

 
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