AP09N70R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP09N70R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 44 nC
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET AP09N70R
AP09N70R Datasheet (PDF)
ap09n70r.pdf
AP09N70RRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 600VDD Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGGSSDescriptionAP09N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.The TO-262 typeprovi
ap09n70r-a.pdf
AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP09N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance an
ap09n70r-a-hf.pdf
AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VDD Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGG RoHS CompliantSSDescriptionAP09N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.
ap09n70i-a.pdf
AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe
ap09n70p-h-lf ap09n70p-h.pdf
AP09N70P/R-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3AGSDescriptionGAP09N70 series are specially designed as main switching devices forTO-220(P)DSuniversal 90~265VAC off-line AC/DC converter app
ap09n70p-a.pdf
AP09N70P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 0.75GG Simple Drive Requirement ID 9AS RoHS CompliantSDescriptionThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is suited for DC-DC ,AC-DC converte
ap09n70i-a-hf.pdf
AP09N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res
ap09n70i-h-hf.pdf
AP09N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg
ap09n70p-a-hf.pdf
AP09N70P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP09N70 series are from Advanced Power innovated designand silicon process technology to achieve the lowe
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