AP09N90W Todos los transistores

 

AP09N90W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09N90W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10.3 nS
   Cossⓘ - Capacitancia de salida: 221 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

AP09N90W Datasheet (PDF)

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AP09N90W

AP09N90WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche test D BVDSS 900V Fast Switching RDS(ON) 1.2 Simple Drive Requirement ID 8.6AGSDescriptionAP09N90 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. TO- 3Ptype provide high block

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AP09N90W

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C provides minimize on-state resistance , superior switchingperformance and high efficiency switching power su

 7.2. Size:217K  ape
ap09n90cw.pdf pdf_icon

AP09N90W

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible

 9.1. Size:238K  ape
ap09n20h.pdf pdf_icon

AP09N90W

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTD3055-094-1G | 2SK1601 | IRFZ24L | CS15N70F

 

 
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