AP09N90W. Аналоги и основные параметры
Наименование производителя: AP09N90W
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 240 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10.3 ns
Cossⓘ - Выходная емкость: 221 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO3P
Аналог (замена) для AP09N90W
- подборⓘ MOSFET транзистора по параметрам
AP09N90W даташит
..1. Size:97K ape
ap09n90w.pdf 
AP09N90W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche test D BVDSS 900V Fast Switching RDS(ON) 1.2 Simple Drive Requirement ID 8.6A G S Description AP09N90 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO- 3P type provide high block
7.1. Size:60K ape
ap09n90cw-hf.pdf 
AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power su
7.2. Size:217K ape
ap09n90cw.pdf 
AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible
9.1. Size:238K ape
ap09n20h.pdf 
AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl
9.2. Size:93K ape
ap09n20bgh-hf.pdf 
AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f
9.3. Size:216K ape
ap09n20h j-hf.pdf 
AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description Advanced Power MOSFETs from APEC provide the designer with G D S TO-252(H) the best combination of fast switching,
9.4. Size:97K ape
ap09n70i-a.pdf 
AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe
9.5. Size:201K ape
ap09n70r-a.pdf 
AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance an
9.6. Size:64K ape
ap09n70p-h-lf ap09n70p-h.pdf 
AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90 265VAC off-line AC/DC converter app
9.7. Size:230K ape
ap09n20bgh.pdf 
AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th
9.8. Size:59K ape
ap09n50i-hf.pdf 
AP09N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
9.9. Size:59K ape
ap09n50i.pdf 
AP09N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistan
9.10. Size:202K ape
ap09n20j.pdf 
AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl
9.11. Size:120K ape
ap09n70p-a.pdf 
AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 0.75 GG Simple Drive Requirement ID 9A S RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converte
9.12. Size:58K ape
ap09n20bgp-hf.pdf 
AP09N20BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G T
9.13. Size:55K ape
ap09n20bgs-hf.pdf 
AP09N20BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the l
9.14. Size:97K ape
ap09n70r.pdf 
AP09N70R RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 600V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.The TO-262 type provi
9.15. Size:97K ape
ap09n70r-a-hf.pdf 
AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G RoHS Compliant S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.
9.16. Size:98K ape
ap09n70i-a-hf.pdf 
AP09N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res
9.17. Size:63K ape
ap09n70i-h-hf.pdf 
AP09N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
9.18. Size:57K ape
ap09n70p-a-hf.pdf 
AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
9.19. Size:58K ape
ap09n20bgi-hf.pdf 
AP09N20BGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G r
9.20. Size:95K ape
ap09n50p-hf.pdf 
AP09N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 500V Fast Switching Characteristic RDS(ON) 0.75 RoHS Compliant & Halogen-Free ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G
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