AP09T10GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP09T10GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO252

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AP09T10GH-HF datasheet

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 ap09t10gh-hf.pdf pdf_icon

AP09T10GH-HF

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provi

 5.1. Size:194K  ape
 ap09t10gh.pdf pdf_icon

AP09T10GH-HF

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf pdf_icon

AP09T10GH-HF

AP09T10GK-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the S The Advanced Power MOSFETs from APEC provide the

 6.2. Size:165K  ape
 ap09t10gk.pdf pdf_icon

AP09T10GH-HF

AP09T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

MOSTRAR MÁS

Otros transistores... AP09N70I-H-HF, AP09N70R-H, AP09N70P-H, AP09N70P-A, AP09N70R, AP09N70R-A-HF, AP09N90CW-HF, AP09N90W, MMIS60R580P, AP09T10GK-HF, AP09T10GP-HF, AP1001BSQ, AP1002BMX, AP10N60W, AP10N70I-A-HF, AP10N70P, AP10N70P-A