AP09T10GH-HF. Аналоги и основные параметры

Наименование производителя: AP09T10GH-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 12.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 30 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: TO252

Аналог (замена) для AP09T10GH-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP09T10GH-HF даташит

 ..1. Size:48K  ape
 ap09t10gh-hf.pdf pdf_icon

AP09T10GH-HF

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provi

 5.1. Size:194K  ape
 ap09t10gh.pdf pdf_icon

AP09T10GH-HF

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf pdf_icon

AP09T10GH-HF

AP09T10GK-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the S The Advanced Power MOSFETs from APEC provide the

 6.2. Size:165K  ape
 ap09t10gk.pdf pdf_icon

AP09T10GH-HF

AP09T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

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