AP1002BMX MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP1002BMX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
Qgⓘ - Carga de la puerta: 29 nC
trⓘ - Tiempo
de subida: 90 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: GREENFET-MX
Búsqueda de reemplazo de AP1002BMX MOSFET
- Selecciónⓘ de transistores por parámetros
AP1002BMX datasheet
..1. Size:99K ape
ap1002bmx.pdf 
AP1002BMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (
9.1. Size:132K ape
ap1005bsq.pdf
AP1005BSQ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 3.8m Low Profile (
9.2. Size:104K ape
ap1001bsq.pdf
AP1001BSQ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 6m Low Profile (
9.3. Size:158K ape
ap1003bst.pdf
AP1003BST Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 4.7m Low Profile (
9.4. Size:133K ape
ap1004cmx.pdf
AP1004CMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra-low Forward Diode D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (
9.5. Size:1583K cn apm
ap100n03p ap100n03t.pdf
AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R
9.6. Size:1377K cn apm
ap100n03ad.pdf
AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R
9.7. Size:903K cn apm
ap100n04d.pdf
AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R
9.8. Size:1461K cn apm
ap100n08d.pdf
AP100N08D 80V N-Channel Enhancement Mode MOSFET Description The AP100N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =100A DS D R
9.9. Size:1663K cn apm
ap100n03d.pdf
AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R
9.10. Size:1322K cn apm
ap100n03y.pdf
AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R
9.11. Size:1150K cn apm
ap100p03d.pdf
AP100P03D -30V P-Channel Enhancement Mode MOSFET Description The AP100P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-100A DS D R
9.12. Size:1239K cn apm
ap100p02nf.pdf
AP100P02NF -20V P-Channel Enhancement Mode MOSFET Description The AP100P02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-100 A DS D R
9.13. Size:1911K cn apm
ap100p04d.pdf
AP100P04D -40V P-Channel Enhancement Mode MOSFET Description The AP100P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-100 A DS D R
9.14. Size:1319K cn apm
ap100n04nf.pdf
AP100N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP100N04NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100A DS D R
Otros transistores... AP09N70R
, AP09N70R-A-HF
, AP09N90CW-HF
, AP09N90W
, AP09T10GH-HF
, AP09T10GK-HF
, AP09T10GP-HF
, AP1001BSQ
, IRFP064N
, AP10N60W
, AP10N70I-A-HF
, AP10N70P
, AP10N70P-A
, AP10N70R-A
, AP10N70S
, AP10N70W
, AP10P10GH-HF
.
