All MOSFET. AP1002BMX Datasheet

 

AP1002BMX Datasheet and Replacement


   Type Designator: AP1002BMX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: GREENFET-MX
 

 AP1002BMX substitution

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AP1002BMX Datasheet (PDF)

 ..1. Size:99K  ape
 ap1002bmx.pdf pdf_icon

AP1002BMX

AP1002BMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (

 9.1. Size:132K  ape
 ap1005bsq.pdf pdf_icon

AP1002BMX

AP1005BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 3.8m Low Profile (

 9.2. Size:104K  ape
 ap1001bsq.pdf pdf_icon

AP1002BMX

AP1001BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 6m Low Profile (

 9.3. Size:158K  ape
 ap1003bst.pdf pdf_icon

AP1002BMX

AP1003BSTPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 4.7m Low Profile (

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Datasheet: AP09N70R , AP09N70R-A-HF , AP09N90CW-HF , AP09N90W , AP09T10GH-HF , AP09T10GK-HF , AP09T10GP-HF , AP1001BSQ , 5N50 , AP10N60W , AP10N70I-A-HF , AP10N70P , AP10N70P-A , AP10N70R-A , AP10N70S , AP10N70W , AP10P10GH-HF .

History: VS7N65AD | BF1109WR

Keywords - AP1002BMX MOSFET datasheet

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