AP10P10GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP10P10GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO251

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AP10P10GJ-HF Datasheet (PDF)

5.1. Size:201K ape
ap10p10gj.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

6.1. Size:101K ape
ap10p10gh j-hf.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

6.2. Size:54K ape
ap10p10gk-hf.pdf

AP10P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Lower Gate Charge RDS(ON) 500mS Fast Switching Characteristic ID - 1.65AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAP10P10 series are from Advanced Power innovated design and siliconprocess technology

6.3. Size:858K cn vbsemi
ap10p10gh.pdf

AP10P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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