AP10P10GJ-HF Specs and Replacement
Type Designator: AP10P10GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO251
AP10P10GJ-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP10P10GJ-HF datasheet
ap10p10gj.pdf
AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switchi... See More ⇒
ap10p10gh j-hf.pdf
AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch... See More ⇒
ap10p10gk-hf.pdf
AP10P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Lower Gate Charge RDS(ON) 500m S Fast Switching Characteristic ID - 1.65A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP10P10 series are from Advanced Power innovated design and silicon process technology ... See More ⇒
Detailed specifications: AP10N60W, AP10N70I-A-HF, AP10N70P, AP10N70P-A, AP10N70R-A, AP10N70S, AP10N70W, AP10P10GH-HF, IRF540, AP11N50I, 2SK3285, 2SK3287, 2SK3288, 2SK3289, 2SK3290, 2SK3304, 2SK3307
Keywords - AP10P10GJ-HF MOSFET specs
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