AP1332GEU-HF Todos los transistores

 

AP1332GEU-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP1332GEU-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT323
 

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AP1332GEU-HF Datasheet (PDF)

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 ap1332geu-hf.pdf pdf_icon

AP1332GEU-HF

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Simple Gate Drive RDS(ON) 600m Small Package Outline ID 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, low on-res

 5.1. Size:134K  ape
 ap1332geu.pdf pdf_icon

AP1332GEU-HF

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 0.6 Small Package Outline ID3 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAP1332 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 6.1. Size:58K  ape
 ap1332gev-hf.pdf pdf_icon

AP1332GEU-HF

AP1332GEV-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mAS RoHS Compliant & Halogen-FreeSC-75GDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, low on-re

 9.1. Size:57K  ape
 ap1334geu-hf.pdf pdf_icon

AP1332GEU-HF

AP1334GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 1.8V Gate Drive RDS(ON) 50m Optimal DC/DC Battery Application ID 2.1AS Halogen Free & RoHS Compliant ProductSOT-323GDDescriptionAP1334 series are from Advanced Power innovated design andGsilicon process tech

MOSTRAR MÁS

Otros transistores... 2SK3289 , 2SK3290 , 2SK3304 , 2SK3307 , 2SK3310 , 2SK3314 , 2SK3378 , AP1203AGMT-HF , IRFB4227 , AP1332GEV-HF , AP1333GU , AP1334GEU-HF , AP13N50I-HF , AP13N50R-HF , AP13N50W , AP13P15GH-HF , AP13P15GJ-HF .

History: 2SK2018-01S | PSMN013-80YS | SSS2N60

 

 
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