AP1333GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP1333GU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.55 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: SOT323

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AP1333GU datasheet

 ..1. Size:93K  ape
ap1333gu.pdf pdf_icon

AP1333GU

AP1333GU RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mA S SOT-323 G Description Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, low on- resistance and cost-eff

 ..2. Size:882K  cn vbsemi
ap1333gu.pdf pdf_icon

AP1333GU

AP1333GU www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Convert

 0.1. Size:93K  ape
ap1333gu-hf.pdf pdf_icon

AP1333GU

AP1333GU-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mA S RoHS Compliant & Halogen-Free SOT-323 G Description Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switchi

 9.1. Size:58K  ape
ap1332gev-hf.pdf pdf_icon

AP1333GU

AP1332GEV-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mA S RoHS Compliant & Halogen-Free SC-75 G D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, low on-re

Otros transistores... 2SK3304, 2SK3307, 2SK3310, 2SK3314, 2SK3378, AP1203AGMT-HF, AP1332GEU-HF, AP1332GEV-HF, IRFB4115, AP1334GEU-HF, AP13N50I-HF, AP13N50R-HF, AP13N50W, AP13P15GH-HF, AP13P15GJ-HF, AP13P15GP-HF, AP13P15GS-HF