AP1333GU Todos los transistores

 

AP1333GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP1333GU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT323
     - Selección de transistores por parámetros

 

AP1333GU Datasheet (PDF)

 ..1. Size:93K  ape
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AP1333GU

AP1333GURoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mASSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching, low on-resistance and cost-eff

 ..2. Size:882K  cn vbsemi
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AP1333GU

AP1333GUwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

 0.1. Size:93K  ape
ap1333gu-hf.pdf pdf_icon

AP1333GU

AP1333GU-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switchi

 9.1. Size:58K  ape
ap1332gev-hf.pdf pdf_icon

AP1333GU

AP1332GEV-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mAS RoHS Compliant & Halogen-FreeSC-75GDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, low on-re

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTP3N80 | RUH3025M3 | STF34N65M5 | TW1529SJ | AP60PN72REN | SSP7150N | 2SK4198FS

 

 
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