AP1333GU MOSFET. Datasheet pdf. Equivalent
Type Designator: AP1333GU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 0.55 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.7 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT323
AP1333GU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP1333GU Datasheet (PDF)
ap1333gu.pdf
AP1333GURoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mASSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching, low on-resistance and cost-eff
ap1333gu.pdf
AP1333GUwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert
ap1333gu-hf.pdf
AP1333GU-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switchi
ap1332gev-hf.pdf
AP1332GEV-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mAS RoHS Compliant & Halogen-FreeSC-75GDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, low on-re
ap1332geu.pdf
AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 0.6 Small Package Outline ID3 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAP1332 series are from Advanced Power innovated design andDsilicon process technology to achieve the
ap1334geu-hf.pdf
AP1334GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 1.8V Gate Drive RDS(ON) 50m Optimal DC/DC Battery Application ID 2.1AS Halogen Free & RoHS Compliant ProductSOT-323GDDescriptionAP1334 series are from Advanced Power innovated design andGsilicon process tech
ap1332geu-hf.pdf
AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Simple Gate Drive RDS(ON) 600m Small Package Outline ID 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, low on-res
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXFN340N06
History: IXFN340N06
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