AP18N20GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP18N20GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TO251

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AP18N20GJ-HF datasheet

 ..1. Size:99K  ape
 ap18n20gh-hf ap18n20gj-hf.pdf pdf_icon

AP18N20GJ-HF

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D

 6.1. Size:172K  ape
 ap18n20gs.pdf pdf_icon

AP18N20GJ-HF

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 6.2. Size:102K  ape
 ap18n20gp-hf ap18n20gs-hf.pdf pdf_icon

AP18N20GJ-HF

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-22

 6.3. Size:155K  ape
 ap18n20gi.pdf pdf_icon

AP18N20GJ-HF

AP18N20GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G D low on-resist

MOSTRAR MÁS

Otros transistores... AP15T20GH-HF, AP15T20GI-HF, AP15T20GS-HF, AP16N50I-HF, AP16N50W, AP18N20AGS-HF, AP18N20GH-HF, AP18N20GI, 7N60, AP18N20GP-HF, AP18N20GS-HF, AP18N50W, AP18P10AGH-HF, AP18P10AGJ-HF, AP18P10GH, AP18P10GJ, AP18P10GI