All MOSFET. AP18N20GJ-HF Datasheet

 

AP18N20GJ-HF Datasheet and Replacement


   Type Designator: AP18N20GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO251
 

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AP18N20GJ-HF Datasheet (PDF)

 ..1. Size:99K  ape
 ap18n20gh-hf ap18n20gj-hf.pdf pdf_icon

AP18N20GJ-HF

AP18N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free GSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D

 6.1. Size:172K  ape
 ap18n20gs.pdf pdf_icon

AP18N20GJ-HF

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP18N20 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 6.2. Size:102K  ape
 ap18n20gp-hf ap18n20gs-hf.pdf pdf_icon

AP18N20GJ-HF

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-22

 6.3. Size:155K  ape
 ap18n20gi.pdf pdf_icon

AP18N20GJ-HF

AP18N20GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,GDlow on-resist

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Datasheet: AP15T20GH-HF , AP15T20GI-HF , AP15T20GS-HF , AP16N50I-HF , AP16N50W , AP18N20AGS-HF , AP18N20GH-HF , AP18N20GI , MMIS60R580P , AP18N20GP-HF , AP18N20GS-HF , AP18N50W , AP18P10AGH-HF , AP18P10AGJ-HF , AP18P10GH , AP18P10GJ , AP18P10GI .

History: AP9930GM-HF | JCS2N70MFH | AP9465GEM | AP9466GH | UPA2793GR

Keywords - AP18N20GJ-HF MOSFET datasheet

 AP18N20GJ-HF cross reference
 AP18N20GJ-HF equivalent finder
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 AP18N20GJ-HF replacement

 

 
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