AP18P10GI Todos los transistores

 

AP18P10GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18P10GI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 32 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F
 

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AP18P10GI Datasheet (PDF)

 ..1. Size:153K  ape
 ap18p10gi.pdf pdf_icon

AP18P10GI

AP18P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized devicedesi

 6.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10GI

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 6.2. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GI

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

 6.3. Size:172K  ape
 ap18p10gk.pdf pdf_icon

AP18P10GI

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to

MOSTRAR MÁS

Otros transistores... AP18N20GJ-HF , AP18N20GP-HF , AP18N20GS-HF , AP18N50W , AP18P10AGH-HF , AP18P10AGJ-HF , AP18P10GH , AP18P10GJ , IRF9640 , AP18P10GK-HF , AP18P10GM-HF , AP18P10GS , AP18T10AGH-HF , AP18T10AGJ-HF , AP18T10AGK-HF , AP18T10GH-HF , AP18T10GI .

History: P0780ATFS | TSD5N65M | AOI296A | AP6901AGSM-HF | IRFH8307 | 8N65KL-TA3-T

 

 
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